DMA150E1600NA single diode standard rectifier 2 3 1 4 part number DMA150E1600NA backside: isolated fav f vv 1.05 rrm 150 1600 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very low forward voltage drop improved thermal behaviour diode for main rectification for single and three phase bridge configurations sot-227b (minibloc) industry standard outline rohs compliant epoxy meets ul 94v-0 base plate: copper internally dcb isolated advanced power cycling isolation voltage: v~ 3000 ixys reserves the right to change limits, conditions and dimensions. 20130117a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA150E1600NA v = v ka2s ka2s ka2s ka2s symbol definition ratings typ. max. i r v i a v f 1.15 r 0.2 k/w r min. 150 v rsm v 200 t = 25c vj t = c vj ma 3.5 v = v r t = 25c vj i = a f v t = c c 110 p tot 620 w t = 25c c r k/w 150 1600 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions unit 1.3 6 t = 25c vj 150 v f0 v 0.78 t = c vj 150 r f 1.8 m ? v 1.05 t = c vj i = a f v 150 1.33 i = a f 300 i = a f 300 threshold voltage slope resistance for power loss calculation only a 125 v rrm v 1600 max. repetitive reverse blocking voltage t = 25c vj c j 60 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i fsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r t = c vj 150 3.00 3.24 32.5 31.6 ka ka ka ka 2.55 2.76 45.0 43.7 1600 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch rectifier 1700 0.10 ixys reserves the right to change limits, conditions and dimensions. 20130117a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA150E1600NA ratings abcde yywwz xxxxxx product marking logo part no. datecode assembly code assembly line d m a 150 e 1600 na part number diode standard rectifier (up to 1800v) single diode sot-227b (minibloc) = = = current rating [a] reverse voltage [v] = = = = package t vj c m d nm 1.5 mounting torque 1.1 t stg c 150 storage temperature -40 weight g 30 symbol definition typ. max. min. conditions virtual junction temperature unit m t nm 1.5 terminal torque 1.1 v v t = 1 second v t = 1 minute isolation voltage mm mm 10.5 3.2 8.6 6.8 d spp/app creepage distance on surface | striking distance through air d spb/apb terminal to backside i rms rms current 150 a per terminal 150 -40 terminal to terminal sot-227b ( minibloc ) delivery mode quantity code no. part number marking on product ordering 1 ) 50/60 hz, rms; i 1 ma isol DMA150E1600NA 508942 tube 10 DMA150E1600NA standard 2500 3000 isol threshold voltage v 0.78 m ? v 0 max r 0 max slope resistance * 1 equivalent circuits for simulation t = vj i v 0 r 0 rectifier 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130117a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA150E1600NA 2 3 1 4 outlines sot-227b (minibloc) ixys reserves the right to change limits, conditions and dimensions. 20130117a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DMA150E1600NA 0.001 0.01 0.1 1 1000 1250 1500 1750 2000 2250 2500 234567890 1 1 10 4 10 5 0.5 1.0 1.5 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 1 10 100 1000 10000 0.00 0.04 0.08 0.12 0.16 0.20 0 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350 i f [a] v f [v] i fsm [a] t[s] i 2 t [a 2 s] t[ms] p tot [w] i f(av)m t ]a[ amb [c] i f(av)m [a] [c] z thjc [k/w] fig. 1 forward current versus voltage drop per diode fig. 2 surge overload current fig. 3 i 2 t versus time per diode fig. 4 power dissipation versus direct output current and ambient temperature fig. 5 max. forward current versus case temperature fig. 6 transient thermal impedance junction to case t[ms] constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.017 0.01 2 0.013 0.00001 3 0.010 0.01 4 0.04 0.04 5 0.12 0.3 0 25 50 75 100 125 150 175 50 hz, 80%v rrm t vj =45c t vj = 150c t vj =45c v r = 0 v t vj =150c r thha = 0.2 k/w 0.4 k/w 0.6 k/w 0.8 k/w 1.0 k/w 2.0 k/w dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 150c t vj = 125c t vj = 25c dc = 1 0.5 0.4 0.33 0.17 0.08 rectifier ixys reserves the right to change limits, conditions and dimensions. 20130117a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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